DIODES BCP5610TA

DIODES · Transistors (BJTs) · MPN BCP5610TA

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain25
Pd - Power Dissipation2W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1A 150MHz 2W Surface Mount SOT-223

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