DIODES BCP51TA

DIODES · Transistors (BJTs) · MPN BCP51TA

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation2W
typePNP
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

45V 40 PNP 1A SOT-223-4 Single Bipolar Transistors RoHS

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