DIODES BCM857BV-7

DIODES · Transistors (BJTs) · MPN BCM857BV-7

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Specifications

Current - Collector Cutoff15nA
Pd - Power Dissipation357mW
DC Current Gain200
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)175MHz
typePNP
Vce Saturation(VCE(sat))400mV
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 175MHz 357mW Surface Mount SOT-563

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