DIODES BC858C-7-F

DIODES · Transistors (BJTs) · MPN BC858C-7-F

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain420
Pd - Power Dissipation310mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

Bipolar (BJT) Transistor PNP 30V 100mA 310mW Surface Mount SOT-23

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