DIODES BC857CQ-7-F

DIODES · Transistors (BJTs) · MPN BC857CQ-7-F

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Specifications

Current - Collector Cutoff4uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain420
Pd - Power Dissipation310mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

45V 420 1 PNP PNP 100mA SOT-23-3 Single Bipolar Transistors RoHS

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