DIODES BC857BV-7

DIODES · Transistors (BJTs) · MPN BC857BV-7

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Specifications

Current - Collector Cutoff15nA
DC Current Gain220
Pd - Power Dissipation150mW
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))100mV
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 150mW Surface Mount SOT-666-6

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