DIODES BC857BTQ-7

DIODES · Transistors (BJTs) · MPN BC857BTQ-7

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Specifications

Current - Collector Cutoff4uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain475
Pd - Power Dissipation150mW
Number2 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))650mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 100MHz 150mW Surface Mount SOT-523

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