DIODES BC857BSQ-7-F

DIODES · Transistors (BJTs) · MPN BC857BSQ-7-F

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Specifications

Current - Collector Cutoff4uA
DC Current Gain220
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
typePNP
Vce Saturation(VCE(sat))400mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

220 45V 200mW PNP 100mA SOT-363 Bipolar Transistor Arrays RoHS

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