DIODES BC857BFA-7B

DIODES · Transistors (BJTs) · MPN BC857BFA-7B

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)340MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain470
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation435mW
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 340MHz 435mW Surface Mount DFN-3(0.8x0.6)

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