DIODES BC856ASQ-7-F

DIODES · Transistors (BJTs) · MPN BC856ASQ-7-F

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Specifications

Current - Collector Cutoff15nA
DC Current Gain125
Collector - Emitter Voltage VCEO65V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
typePNP
Vce Saturation(VCE(sat))650mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

125 65V 200mW PNP 100mA SOT-363 Bipolar Transistor Arrays RoHS

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