DIODES BC856AS-7

DIODES · Transistors (BJTs) · MPN BC856AS-7

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Specifications

Current - Collector Cutoff15nA
DC Current Gain125
Collector - Emitter Voltage VCEO65V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))300mV
typePNP
Number1 PNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 65V 100mA 200mW Surface Mount SC-70-6(SOT-363)

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