DIODES BC848C-7-F

DIODES · Transistors (BJTs) · MPN BC848C-7-F

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain420
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 30V 100mA 300MHz 300mW Surface Mount SOT-23

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