DIODES BC847PNQ-7R-F

DIODES · Transistors (BJTs) · MPN BC847PNQ-7R-F

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Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation200mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))600mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 45V 100mA 300MHz 200mW Surface Mount SOT-363

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