DIODES BC847CDLP-7

DIODES · Transistors (BJTs) · MPN BC847CDLP-7

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Specifications

Current - Collector Cutoff15nA
DC Current Gain650
Pd - Power Dissipation350mW
Collector - Emitter Voltage VCEO45V
Transition frequency(fT)100MHz
Vce Saturation(VCE(sat))130mV
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃

Technical details

650 350mW 45V NPN 100mA DFN-6(1.3x1) Bipolar Transistor Arrays RoHS

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