DIODES BC847BVNQ-7

DIODES · Transistors (BJTs) · MPN BC847BVNQ-7

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Specifications

Current - Collector Cutoff15nA
Pd - Power Dissipation150mW
DC Current Gain200
Collector - Emitter Voltage VCEO45V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))600mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

150mW 200 45V NPN+PNP 100mA SOT-563 Bipolar Transistor Arrays RoHS

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