DIODES BC847BFZ-7B

DIODES · Transistors (BJTs) · MPN BC847BFZ-7B

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO5V
DC Current Gain200
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA Surface Mount SOT-23

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