DIODES BC847A-7-F

DIODES · Transistors (BJTs) · MPN BC847A-7-F

No reviews yet — be the first to review DIODES BC847A-7-F.

Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain110
Pd - Power Dissipation350mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 350mW Surface Mount SOT-23

Related Transistors (BJTs)