DIODES BC846BLP4-7B

DIODES · Transistors (BJTs) · MPN BC846BLP4-7B

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO65V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

65V 200 1 NPN NPN 100mA DFN-3(1x0.6) Single Bipolar Transistors RoHS

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