DIODES BC807-25W-7

DIODES · Transistors (BJTs) · MPN BC807-25W-7

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Specifications

Current - Collector Cutoff5uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation200mW
Number1 PNP
typePNP
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))700mV

Technical details

Bipolar (BJT) Transistor PNP 45V 500mA 200mW Surface Mount SOT-323

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