DIODES BC56-16PA-7

DIODES · Transistors (BJTs) · MPN BC56-16PA-7

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Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation520mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1A 125MHz 520mW Surface Mount DFN-3(2x2)

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