DIODES ADTC114EUAQ-7

DIODES · Transistors (BJTs) · MPN ADTC114EUAQ-7

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain30
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio-
Number1 NPN (Pre-Biased)
Pd - Power Dissipation330mW
Voltage - Input(Max)(VI(off))500mV
Input Voltage (VI(on)@Ic,Vce)1.9V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 330mW Surface Mount SOT-323

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