DIODES ADTC114EUAQ-13

DIODES · Transistors (BJTs) · MPN ADTC114EUAQ-13

No reviews yet — be the first to review DIODES ADTC114EUAQ-13.

Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio1
Pd - Power Dissipation330mW
Voltage - Input(Max)(VI(off))500mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 330mW Surface Mount SOT-323

Related Transistors (BJTs)