DIODES ADTA114ECAQ-7

DIODES · Transistors (BJTs) · MPN ADTA114ECAQ-7

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain30
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor10kΩ
Resistor Ratio-
Pd - Power Dissipation310mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 310mW Surface Mount SOT-23

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