DIODES ADTA114ECAQ-13

DIODES · Transistors (BJTs) · MPN ADTA114ECAQ-13

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain30
Vce Saturation(VCE(sat))-
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor-
Resistor Ratio-
Pd - Power Dissipation310mW

Technical details

50V 30 100mA 310mW PNP 1 PNP Pre-Biased SOT-23-3 Single, Pre-Biased Bipolar Transistors RoHS

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