DIODES ACX114EUQ-13R

DIODES · Transistors (BJTs) · MPN ACX114EUQ-13R

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Specifications

DC Current Gain30
Input Resistor10kΩ
Resistor Ratio1
Number1 NPN, 1 PNP Pre-Biased
Pd - Power Dissipation270mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

30 1 NPN, 1 PNP Pre-Biased 270mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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