DIODES 2DD2679-13

DIODES · Transistors (BJTs) · MPN 2DD2679-13

No reviews yet — be the first to review DIODES 2DD2679-13.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)240MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
DC Current Gain270
Pd - Power Dissipation900mW
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))80mV

Technical details

Bipolar (BJT) Transistor NPN 30V 2A 240MHz 0.9W Surface Mount SOT-89-3L

Related Transistors (BJTs)