DIODES 2DD1664R-13

DIODES · Transistors (BJTs) · MPN 2DD1664R-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)280MHz
Collector - Emitter Voltage VCEO32V
Emitter-Base Voltage VEBO6V
DC Current Gain180
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 32V 1A 280MHz 1W Surface Mount SOT-89

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