DIODES 2DB1184Q-13

DIODES · Transistors (BJTs) · MPN 2DB1184Q-13

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)110MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain120
Pd - Power Dissipation1.2W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 50V 3A 1.2W Surface Mount TO-252(DPAK)

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