DIODES 2DA1797Q-13

DIODES · Transistors (BJTs) · MPN 2DA1797Q-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain82
Pd - Power Dissipation900mW
Number1 PNP
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))350mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 50V 3A 160MHz 0.9W Surface Mount SOT-89

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