DIODES 2DA1201Y-7

DIODES · Transistors (BJTs) · MPN 2DA1201Y-7

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO120V
Emitter-Base Voltage VEBO7V
DC Current Gain120
Pd - Power Dissipation1.5W
Number1 PNP
typePNP
Current - Collector(Ic)800mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))1V

Technical details

Bipolar (BJT) Transistor PNP 120V 800mA 160MHz 1.5W Surface Mount SOT-89

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