Cmos MJD122G

Cmos · Transistors (BJTs) · MPN MJD122G

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Specifications

Current - Collector Cutoff10uA
Vbe Saturation(VBE(sat))4.5V
Collector - Emitter Voltage VCEO100V
DC Current Gain8000
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation20W
typeNPN
Current - Collector(Ic)8A
Vce Saturation(VCE(sat))4V@8A,80mA

Technical details

100V 8000 NPN 8A TO-252(DPAK) Single Bipolar Transistors RoHS

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