Cmos · Transistors (BJTs) · MPN MJD112T4G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Vbe On(VBE(on)) | 2.5V |
| Collector - Emitter Voltage VCEO | 100V |
| Emitter-Base Voltage VEBO | 5V |
| Pd - Power Dissipation | 20W |
| type | NPN |
| Current - Collector(Ic) | 2A |
| Vce Saturation(VCE(sat)) | 1.5V |
100V NPN 2A TO-252 Single Bipolar Transistors RoHS