ChipNobo MMBD914LT1G-CN

ChipNobo · Transistors (BJTs) · MPN MMBD914LT1G-CN

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Specifications

Non-Repetitive Peak Forward Surge Current2A
Current - Rectified300mA
Diode Configuration1 Independent
Pd - Power Dissipation350mW
Voltage - Forward(Vf@If)1.25V@150mA
Reverse Leakage Current (Ir)1uA@75V
Voltage - DC Reverse(Vr)100V
Reverse Recovery Time (trr)4ns

Technical details

300mA 1 Independent 1.25V@150mA 100V 4ns SOT-23 Single Bipolar Transistors RoHS

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