Chao He MMBT5551

Chao He · Transistors (BJTs) · MPN MMBT5551

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO120V
DC Current Gain300
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation300mW
Configuration-
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

120V 300 1 NPN NPN 600mA SOT-23 Single Bipolar Transistors RoHS

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