Central 2N5551 TIN/LEAD

Central · Transistors (BJTs) · MPN 2N5551 TIN/LEAD

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO160V
DC Current Gain80
Pd - Power Dissipation625mW
typeNPN
Current - Collector(Ic)600mA
Vce Saturation(VCE(sat))200mV
Operating Temperature-65℃~+150℃

Technical details

160V 80 NPN 600mA TO-92-3 Single Bipolar Transistors

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