CBI UMH3N

CBI · Transistors (BJTs) · MPN UMH3N

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Specifications

Current - Collector Cutoff0.5uA
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain600
Emitter-Base Voltage VEBO5V
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV@5mA,0.25mA
Operating Temperature-
Output Voltage(VO(on))-
Input Resistor6.11kΩ
Resistor Ratio-
Pd - Power Dissipation-

Technical details

50V 600 100mA 2 NPN (Pre-Biased) NPN SOT-363 Single, Pre-Biased Bipolar Transistors RoHS

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