CBI MMUN2235

CBI · Transistors (BJTs) · MPN MMUN2235

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Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)-
Emitter-Base Voltage VEBO-
DC Current Gain80
Current - Collector(Ic)100mA
Operating Temperature-
Vce Saturation(VCE(sat))250mV
Output Voltage(VO(on))-
Input Resistor2.86kΩ
Resistor Ratio0.056
Pd - Power Dissipation200mW

Technical details

50V 80 100mA 200mW 1 NPN (Pre-Biased) NPN SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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