CBI MMDT3906V

CBI · Transistors (BJTs) · MPN MMDT3906V

No reviews yet — be the first to review CBI MMDT3906V.

Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation200mW
typePNP+PNP
Number2 PNP
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))250mV;400mV

Technical details

40V 300 PNP+PNP 2 PNP 200mA SOT-563 Single Bipolar Transistors RoHS

Related Transistors (BJTs)