CBI MMBTSC2412

CBI · Transistors (BJTs) · MPN MMBTSC2412

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain390
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 50V 150mA 160MHz 200mW Surface Mount SOT-23

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