CBI MMBTRA226S

CBI · Transistors (BJTs) · MPN MMBTRA226S

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Specifications

Collector - Emitter Voltage VCEO50V
Transition frequency(fT)200MHz
DC Current Gain56
Current - Collector(Ic)800mA
Output Voltage(VO(on))300mV@50mA,2.5mA
Input Resistor2.2kΩ
Number1 PNP Pre-Biased
typePNP
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)2V
Voltage - Input(Max)(VI(off))300mV

Technical details

50V 56 800mA 1 PNP Pre-Biased PNP 200mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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