CBI MMBTRA101SS

CBI · Transistors (BJTs) · MPN MMBTRA101SS

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Specifications

Collector - Emitter Voltage VCEO50V
Transition frequency(fT)200MHz
DC Current Gain30
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor4.7kΩ
Number1 PNP Pre-Biased
typePNP
Resistor Ratio1
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)2V@5mA,200mV

Technical details

50V 30 100mA 1 PNP Pre-Biased PNP 200mW SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

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