CBI EMX1

CBI · Transistors (BJTs) · MPN EMX1

No reviews yet — be the first to review CBI EMX1.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain560
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation150mW
typeNPN
Number2 NPN
Current - Collector(Ic)150mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

50V 560 NPN 2 NPN 150mA SOT-563 Single Bipolar Transistors RoHS

Related Transistors (BJTs)