CBI · Transistors (BJTs) · MPN EMT1
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 140MHz |
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 560 |
| Emitter-Base Voltage VEBO | 6V |
| Pd - Power Dissipation | 150mW |
| type | PNP+PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 150mA |
| Vce Saturation(VCE(sat)) | 500mV |
| Operating Temperature | -55℃~+150℃ |
50V 560 PNP+PNP 2 PNP 150mA SOT-563 Single Bipolar Transistors RoHS