CBI DTC144EE

CBI · Transistors (BJTs) · MPN DTC144EE

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Specifications

Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain68
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Output Voltage(VO(on))300mV
Input Resistor47kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio1
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 150mW Surface Mount SOT-523

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