CBI DTC124EE

CBI · Transistors (BJTs) · MPN DTC124EE

No reviews yet — be the first to review CBI DTC124EE.

Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain56
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV
Input Resistor22kΩ
Resistor Ratio1
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-523

Related Transistors (BJTs)