CBI DTC123JE

CBI · Transistors (BJTs) · MPN DTC123JE

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Specifications

Current - Collector Cutoff-
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO-
DC Current Gain80
Operating Temperature-
Vce Saturation(VCE(sat))-
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor2.86kΩ
Resistor Ratio26
Pd - Power Dissipation150mW

Technical details

50V 80 100mA 150mW 1 NPN (Pre-Biased) NPN SOT-523 Single, Pre-Biased Bipolar Transistors RoHS

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