CBI DTC114YCA

CBI · Transistors (BJTs) · MPN DTC114YCA

No reviews yet — be the first to review CBI DTC114YCA.

Specifications

Current - Collector Cutoff-
Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain-
Emitter-Base Voltage VEBO-
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))-
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor10kΩ
Resistor Ratio4.7
Pd - Power Dissipation200mW

Technical details

50V 100mA 200mW 1 NPN (Pre-Biased) NPN SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)