CBI DTC114EUA

CBI · Transistors (BJTs) · MPN DTC114EUA

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Specifications

Collector - Emitter Voltage VCEO50V
Transition frequency(fT)250MHz
DC Current Gain30
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio1.2
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

50V 30 100mA 1 NPN (Pre-Biased) NPN 200mW SOT-323 Single, Pre-Biased Bipolar Transistors RoHS

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