CBI DTC114EE

CBI · Transistors (BJTs) · MPN DTC114EE

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Input Resistor13kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio1
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-523

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