CBI DTA114TE

CBI · Transistors (BJTs) · MPN DTA114TE

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio-
Pd - Power Dissipation150mW

Technical details

50V 100 100mA 150mW 1 PNP Pre-Biased PNP SOT-523 Single, Pre-Biased Bipolar Transistors RoHS

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